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PD - 94170
IRF2807S
l
Advanced Process Technology
IRF2807L
HEXFET ? Power MOSFET
l
l
Ultra Low On-Resistance
Dynamic dv/dt Rating
D
V DSS = 75V
l 175 ° C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET ? Power MOSFETs from International
G
S
R DS(on) = 13m ?
I D = 82A ?
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The D 2 Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D 2 Pak is suitable for
high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF2807L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
D 2 Pak
IRF2807S
Max.
TO-262
IRF2807L
Units
I D @ T C = 25 ° C
Continuous Drain Current, V GS @ 10V
82 ?
I D @ T C = 100 ° C
I DM
P D @T C = 25 ° C
V GS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
58
280
230
1.5
± 20
43
23
5.9
A
W
W/ ° C
V
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf ? in (1.1N ? m)
° C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
–––
–––
0.65
40
° C/W
www.irf.com
1
02/14/02
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